منابع مشابه
Observations of Current Blocking in InP/GaAsSb DHBTs
Type II InP/GaAsSb transistors have attracted much interest in high speed microelectronics. However, Kirk-effectinduced current blocking was observed, limiting the highest achievable current density and hence the speed. In this work, we present an explanation as to the cause of current blocking in InP/GaAsSb DHBTs. The effects of collector thickness are investigated and methods to achieve highe...
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Although InP/GaAs0.51Sb0.49/InP DHBT has recently attracted much interest, some sensitive material parameters are still uncertain. We detailed the simulation methodology used to evaluate bandgap energy, minority carrier lifetime and band gap narrowing effect. Moreover, the high-injection effect is analysed as resulting from electron parasitic barrier formation at base-collector junction.
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We report high fmax and high current InP/InGaAs/InP DHBT in transferred-substrate technology. The common base device with equivalent emitter size of 128 um exhibits fmax of 330 GHz at the current of 100 mA. The common emitter device with emitter area of 64 um shows fmax of 371 GHz when biased at 57 mA. The breakdown voltage of these DHBTs is up to 7 volts at low current density. All the devices...
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The simulation of current impulse response using random response time model in avalanche photodiode is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included in our model to demonstrate the impact on current impulse response of thin avalanche photodiodes. Curr...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2019
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1400/6/066055